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Combined Raman and photoluminescence imaging of 2D WS2

Diagram of the process

With their special electronic, optical and optoelectronic properties, tungsten disulfide (WS2) 2D crystals have recently attracted significant interest as emerging materials for the production of new electronic and optoelectronic devices. Reflected white light microscopy is widely employed to characterise the layers’ structure but has limited performance in revealing the spatial variation of composition, optical and electronic properties. In this application note, Raman and photoluminescence spectral imaging are applied to reveal otherwise invisible spatial variation in chemical/crystal structure.

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