S1011x

New ranges of integrated C-MOS linear image sensors with 50 µm or 25 µm pitch pixels. They incorporate up to 1024 individual photodiode elements with C-MOS buffer amplifier, digital shift register and signal processing circuit on the same monolithic silicon chip. Provide higher UV sensitivity and smoother spectral repsonse than previous types, as spikes in the UV range have been removed.

Hamamatsu Photonics (UK) Ltd
Issue: 20/03
RSN: 066

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